Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Zhong, Ruohan; Padhamnath, Pradeep; Choi, Wook-Jin; Ok, Young-Woo; Dasgupta, Sagnik; Rohatgi, Ajeet

doi:10.1016/j.tsf.2023.140046

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Journal Article · Tue Sep 12 00:00:00 EDT 2023 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2023.140046· OSTI ID:2483307

^[1]; Padhamnath, Pradeep ^[2]; ^[1]; ^[1]; ^[1]; ^[1]

Georgia Institute of Technology, Atlanta, GA (United States)
National University of Singapore (Singapore)

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm² and 0.5 mA/cm² due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J₀), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J₀ to ~100 mA/cm².

View Accepted Manuscript (DOE)

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0008975; EE0009350

OSTI ID:: 2483307

Alternate ID(s):: OSTI ID: 2000778

Journal Information:: Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 140046 Vol. 783; ISSN 0040-6090

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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