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Uniform Diffusion of Cooper Pairing Mediated by Hole Carriers in Topological Sb2Te3/Nb

Journal Article · · ACS Nano
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  1. University of Illinois at Urbana-Champaign, IL (United States)
  2. University of Tokyo, Chiba (Japan)
  3. National Central University, Taoyuan (Taiwan)
  4. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
+ Show Author Affiliations
Spin-helical Dirac Fermions at a doped topological insulator’s boundaries can support Majorana quasiparticles when coupled with s-wave superconductors, but in n-doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are p-doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in p-doped topological Sb2Te3 on superconducting Nb. Despite no momentum-space degeneracy, the topological and bulk states of Sb2Te3/Nb exhibit the same isotropic superconducting gaps at low temperatures. Furthermore, our results unify principles for realizing accessible pairing in Dirac Fermions relevant to topological superconductivity.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); University of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Organization:
Japan Society for the Promotion of Science (JSPS KAKENHI); KAKENHI; Ministry of Education, Culture, Sports, Science and Technology (MEXT); National Science and Technology Council of Taiwan; Quantum Leap Flagship Program (Q-LEAP); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-05CH11231; FG02-07ER46383
OSTI ID:
2475451
Alternate ID(s):
OSTI ID: 2571634
OSTI ID: 2476932
Journal Information:
ACS Nano, Journal Name: ACS Nano Journal Issue: 45 Vol. 18; ISSN 1936-086X; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Proximity effects
energy
flip-chip method
interband superconducting coherence
p-doped topological insulators
photoemission
thickness
thin films
thin-film heterostructures
topological insulator
topological superconductivity