Complex dislocation loop networks as natural extensions of the sink efficiency of saturated grain boundaries in irradiated metals

He, Sicong; Mang, Emily H.; El Atwani, Osman; Nathanie, James; Leff, Asher C.; Zhou, Xinran; Taheri, Mitra L.; Marian, Jaime

doi:10.1126/sciadv.adj8395

Complex dislocation loop networks as natural extensions of the sink efficiency of saturated grain boundaries in irradiated metals

Journal Article · Fri May 03 00:00:00 EDT 2024 · Science Advances

DOI:https://doi.org/10.1126/sciadv.adj8395· OSTI ID:2472114

^[1]; ^[2]; El Atwani, Osman ^[3]; Nathanie, James ^[4]; ^[5]; ^[6]; ^[2]; ^[6]

University of California, Los Angeles, CA (United States); Univ. of California, Los Angeles, CA (United States)
Johns Hopkins University, Baltimore, MD (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Army Research Laboratory, Adelphi, MD (United States)
University of California, Los Angeles, CA (United States)

The development of radiation-tolerant structural materials is an essential element for the success of advanced nuclear energy concepts. A proven strategy to increase radiation resistance is to create microstructures with a high density of internal defect sinks, such as grain boundaries (GBs). However, as GBs absorb defects, they undergo internal transformations that limit their ability to capture defects indefinitely. Here, we show that, as the sink efficiency of GBs becomes exhausted with increasing irradiation dose, networks of irradiation loops form in the vicinity of saturated or near-saturated GB, maintaining and even increasing their capacity to continue absorbing defects. The formation of these networks fundamentally changes the driving force for defect absorption at GB, from “chemical” to “elastic.” Using thermally-activated dislocation dynamics simulations, we show that these networks are consistent with experimental measurements of defect densities near GB. Our results point to these networks as a natural continuation of the GB once they exhaust their internal defect absorption capacity.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Johns Hopkins University, Baltimore, MD (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; SC0020314

OSTI ID:: 2472114

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 18 Vol. 10; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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