Five-second coherence of a single spin with single-shot readout in silicon carbide

Anderson, Christopher P.; Glen, Elena O.; Zeledon, Cyrus; Bourassa, Alexandre; Jin, Yu; Zhu, Yizhi; Vorwerk, Christian; Crook, Alexander L.; Abe, Hiroshi; Ul-Hassan, Jawad; Ohshima, Takeshi; Son, Nguyen T.; Galli, Giulia; Awschalom, David D.

doi:10.1126/sciadv.abm5912

Five-second coherence of a single spin with single-shot readout in silicon carbide

Journal Article · Tue Feb 01 23:00:00 EST 2022 · Science Advances

DOI:https://doi.org/10.1126/sciadv.abm5912· OSTI ID:2469999

^[1]; ^[1]; ^[1]; ^[1]; Jin, Yu ^[1]; Zhu, Yizhi ^[1]; ^[1]; ^[1]; ^[2]; ^[3]; ^[2]; ^[3]; Galli, Giulia ^[4]; ^[4]

Univ. of Chicago, IL (United States)
National Institutes for Quantum Science and Technology, Takasaki (Japan)
Linköping Univ. (Sweden)
Univ. of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect’s spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or postselection, resulting in a high signal-to-noise ratio that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single-spin T₂ > 5 seconds, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Defense Advanced Research Projects Agency (DARPA); US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2469999

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 5 Vol. 8; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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