Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Papnai, Bhartendu; Chen, Ding-Rui; Ghosh, Rapti; Yen, Zhi-Long; Chen, Yu-Xiang; Rehman, Khalil Ur; Chen, Hsin-Yi Tiffany; Hsieh, Ya-Ping; Hofmann, Mario

doi:10.3390/nano14110972

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Journal Article · Mon Jun 03 00:00:00 EDT 2024 · Nanomaterials

DOI:https://doi.org/10.3390/nano14110972· OSTI ID:2469962

^[1]; ^[2]; ^[3]; Yen, Zhi-Long ^[4]; Chen, Yu-Xiang ^[4]; Rehman, Khalil Ur ^[4]; Chen, Hsin-Yi Tiffany ^[5]; Hsieh, Ya-Ping ^[6]; ^[7]

National Tsing Hua University, Hsinchu (Taiwan); Academia Sinica, Taipei (Taiwan); National Taiwan University, Taipei (Taiwan)
Academia Sinica, Taipei (Taiwan); Massachusetts Institute of Technology, Cambridge, MA (United States)
University of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
Academia Sinica, Taipei (Taiwan); National Taiwan University, Taipei (Taiwan)
National Tsing Hua University, Hsinchu (Taiwan)
Academia Sinica, Taipei (Taiwan)
National Taiwan University, Taipei (Taiwan)

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2469962

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Journal Issue: 11 Vol. 14; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

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