Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

Shifat, A. Zadid; Stricklin, Isaac; Chityala, Ravi Kiran; Aryal, Arjun; Esteves, Giovanni; Siddiqui, Aleem; Busani, Tito

doi:10.3390/nano13020274

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

Journal Article · Sun Jan 08 23:00:00 EST 2023 · Nanomaterials

DOI:https://doi.org/10.3390/nano13020274· OSTI ID:2469901

^[1]; Stricklin, Isaac ^[1]; ^[1]; ^[1]; ^[2]; Siddiqui, Aleem ^[2]; Busani, Tito ^[1]

University of New Mexico, Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made Sc_xAl_1-xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating Sc_xAl_1-xN devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of Sc_xAl_1-xN (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: NA0003525

OSTI ID:: 2469901

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Journal Issue: 2 Vol. 13; ISSN 2079-4991

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
annealing
chemistry
materials science
physics
scandium doped aluminum nitride (ScAlN)
science & technology
tetramethyl ammonium hydroxide (TMAH)
thin films
wet etching

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

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