CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

Yang, Zihao; Wei, Xiucheng; Roy, Pinku; Zhang, Di; Lu, Ping; Dhole, Samyak; Wang, Haiyan; Cucciniello, Nicholas; Patibandla, Nag; Chen, Zhebo; Zeng, Hao; Jia, Quanxi; Zhu, Mingwei

doi:10.3390/ma16237468

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

Journal Article · Thu Nov 30 00:00:00 EST 2023 · Materials

DOI:https://doi.org/10.3390/ma16237468· OSTI ID:2469894

Yang, Zihao ^[1]; Wei, Xiucheng ^[2]; Roy, Pinku ^[2]; ^[3]; Lu, Ping ^[4]; Dhole, Samyak ^[2]; ^[3]; ^[2]; Patibandla, Nag ^[1]; Chen, Zhebo ^[1]; Zeng, Hao ^[2]; ^[2]; Zhu, Mingwei ^[1]

Applied Materials Inc., Santa Clara, CA (United States)
State Univ. of New York at Buffalo, NY (United States)
Purdue Univ., West Lafayette, IN (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H_c2 (34.06 T boost in H_c2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: NA0003525

OSTI ID:: 2469894

Journal Information:: Materials, Journal Name: Materials Journal Issue: 23 Vol. 16; ISSN 1996-1944

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

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