Isolation of Single Donors in ZnO

Hansen, Ethan R.; Niaouris, Vasileios; Matthews, Bethany E.; Zimmermann, Christian; Wang, Xingyi; Kolodka, Roman; Vines, Lasse; Spurgeon, Steven R.; Fu, Kai-Mei C.

doi:10.1103/physrevlett.133.146902

Isolation of Single Donors in ZnO

Journal Article · Fri Oct 04 00:00:00 EDT 2024 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.133.146902· OSTI ID:2455024

^[1]; ^[2]; ^[3]; Zimmermann, Christian ^[2]; ^[2]; ^[2]; ^[4]; ^[5]; Fu, Kai-Mei C. ^[5]

University of Washington, Seattle, WA (United States); University of Washington
University of Washington, Seattle, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
University of Oslo (Norway)
University of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The emission stability of these single donors in terms of both intensity and frequency, alongside their transition linewidths less than twice the lifetime limit, highlight the promise of single In donors as optically accessible spin qubits. Here, the optical stability of single donors after FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); University of Washington, Seattle, WA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-76RL01830; SC0012704; SC0020378

OSTI ID:: 2455024

Alternate ID(s):: OSTI ID: 2459344
OSTI ID: 2499517

Report Number(s):: PNNL-SA--205477

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 14 Vol. 133; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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