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Tutorial: Defects in topological semimetals

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0217533· OSTI ID:2447460
 [1];  [2];  [3];  [3]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
  2. Univ. of Colorado, Boulder, CO (United States)
  3. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Three-dimensional topological semimetals are a class of electronic materials in which their bulk and surface states contain linear band touching nodes near the Fermi level. Like semiconductors, their properties will be affected by point and extended defects in their crystal structures, although the extent to which defects and disorders influence topological semimetals may differ in key ways due to their unique electronic structures. In this Tutorial, we provide an overview of the defects in topological semimetals, covering both computational and experimental methods for exploring defect-property relationships. We also include a discussion on open questions that still need to be explored further.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
2447460
Report Number(s):
NREL/JA--5K00-91034; MainId:92812; UUID:d24b4b1d-e3e1-4f96-ab29-33006d9ba345; MainAdminId:73559
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 136; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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