Photoluminescence of rare-earth-doped Ga{sub 2}S{sub 3}{sub 0.95}(Eu{sub 2}O{sub 3}){sub 0.05} single crystals
Journal Article
·
· Inorganic Materials
OSTI ID:244247
- Abdullaev Inst. of Physics, Baku (Azerbaijan)
Owing to an efficient energy transfer to 4f electrons, doping with rare earths (REs) allows improvement of the quantum yield of luminescence and the creation of new emitting centers in crystals. For these systems, investigation of the mechanism for excitation energy transfer and identification of electron transitions responsible for the emission bands observed are also of current interest. In luminescing systems containing REs, efficient transfer of excitation energy from one ion to another may result in sensitized luminescence. In this work, we studied the interaction of Eu{sup 2+} ions with Er, Pr, and Sm dopant ions.
- OSTI ID:
- 244247
- Journal Information:
- Inorganic Materials, Vol. 31, Issue 10; Other Information: PBD: Oct 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 10, 1354-1356(1995)
- Country of Publication:
- United States
- Language:
- English
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