Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators (Ge1–δ–xMnx)2Bi2Te5 (x≤0.47,&nbsp;0.11≤δ≤0.20)

Qian, Tiema; Hu, Chaowei; Green, J.; Feng, Erxi; Cao, Huibo; Ni, Ni

doi:10.1103/physrevmaterials.8.084203

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators ( Ge 1–δ–x Mnx ) 2 Bi2 Te5 (x≤0.47 , 0.11≤δ≤0.20)

Journal Article · Tue Aug 27 00:00:00 EDT 2024 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.8.084203· OSTI ID:2440982

Qian, Tiema ^[1]; Hu, Chaowei ^[1]; Green, J. ^[1]; ^[2]; ^[2]; ^[1]

Univ. of California, Los Angeles, CA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Magnetic topological insulators provide a platform for emergent phenomena arising from the interplay between magnetism and band topology. Here we report the single crystal growth, crystal structure, magnetic and transport properties, as well as the neutron scattering studies of topological insulator series (Ge_1–δ–xMn_x)₂⁢Bi₂⁢Te₅ (x ≤ 0.47, 0.11 ≤ δ ≤ 0.20). Upon doping up to x = 0.47, the lattice parameter c decreases by 0.8%, while the lattice parameter a remains nearly unchanged. Significant Ge vacancies and Ge/Bi site mixing are revealed via elemental analysis as well as refinements of the neutron and x-ray diffraction data, resulting in holes dominating the charge transport. At x = 0.47, below 10.8 K, a bilayer A-type antiferromagnetic ordered state emerges, featuring an ordered moment of 3.0(3) μ_B/Mn at 5 K, with the c axis as the easy axis. Magnetization data unveils a much stronger effective interlayer antiferromagnetic exchange interaction and a much smaller uniaxial anisotropy compared to MnBi₂⁢Te₄. We attribute the former to the shorter nearest-neighbor Mn-Mn interlayer superexchange path and the latter to the smaller ligand-field splitting in (Ge_1–δ–x⁢Mn_x)₂⁢Bi₂⁢Te₅. Finally, our study demonstrates that this series of materials holds promise for the investigation of the layer Hall effect and quantum metric nonlinear Hall effect.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; SC0021117

OSTI ID:: 2440982

Alternate ID(s):: OSTI ID: 2474497

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 8 Vol. 8; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators ( Ge 1–δ–x Mnx ) 2 Bi2 Te5 (x≤0.47 , 0.11≤δ≤0.20)

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