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Nearly flat Chern band in periodically strained monolayer and bilayer graphene

Journal Article · · Physical Review. B
 [1];  [2];  [2];  [1]
  1. Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
The flat band is a key ingredient for the realization of interesting quantum states for functionalities. Here, in this paper, we investigate the conditions for the flat band in both monolayer and bilayer graphene under periodic strain. We find topological nearly flat bands with homogeneous distribution of Berry curvature in both systems. The quantum metric of the nearly flat band closely resembles that for Landau levels. For monolayer graphene, the strain field can be regarded as an effective gauge field, while for Bernal-stacked (AB-stacked) bilayer graphene, its role is beyond the description of a gauge field. We also provide an understanding of the origin of the nearly flat band in monolayer graphene in terms of the Jackiw-Rebbi model for Dirac fermions with sign-changing mass. In this paper, we suggest strained graphene as a promising platform for strongly correlated quantum states.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
Gordon and Betty Moore Foundation (GBMF); US Department of the Navy, Office of Naval Research (ONR); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
89233218CNA000001
OSTI ID:
2439459
Alternate ID(s):
OSTI ID: 2001148
Report Number(s):
LA-UR--23-21523
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 12 Vol. 108; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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