Phase Transformations Driving Biaxial Stress Reduction During Wake-Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

Jaszewski, Samantha T.; Fields, Shelby S.; Calderon, Sebastian; Aronson, Benjamin L.; Beechem, Thomas E.; Kelley, Kyle P.; Zhang, Casey; Lenox, Megan K.; Brummel, Ian A.; Dickey, Elizabeth C.; Ihlefeld, Jon F.

doi:10.1002/aelm.202400151

Phase Transformations Driving Biaxial Stress Reduction During Wake-Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

Journal Article · Fri Jun 21 00:00:00 EDT 2024 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202400151· OSTI ID:2428033

^[1]; ^[2]; ^[3]; ^[2]; ^[4]; ^[5]; Zhang, Casey ^[2]; ^[2]; ^[2]; ^[3]; ^[2]

University of Virginia, Charlottesville, VA (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
University of Virginia, Charlottesville, VA (United States)
Carnegie Mellon University, Pittsburgh, PA (United States)
Purdue University, West Lafayette, IN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Biaxial stress is identified to play an important role in the polar orthorhombic phase stability in hafnium oxide-based ferroelectric thin films. However, the stress state during various stages of wake-up has not yet been quantified. In this work, the stress evolution with field cycling in hafnium zirconium oxide capacitors is evaluated. The remanent polarization of a 20 nm thick hafnium zirconium oxide thin film increases from 9.80 to 15.0 µC cm^–2 following 10⁶ field cycles. This increase in remanent polarization is accompanied by a decrease in relative permittivity that indicates that a phase transformation has occurred. The presence of a phase transformation is supported by nano-Fourier transform infrared spectroscopy measurements and scanning transmission electron microscopy that show an increase in ferroelectric phase content following wake-up. The stress of individual devices field cycled between pristine and 10⁶ cycles is quantified using the sin²(ψ) technique, and the biaxial stress is observed to decrease from 4.3 ± 0.2 to 3.2 ± 0.3 GPa. The decrease in stress is attributed, in part, to a phase transformation from the antipolar Pbca phase to the ferroelectric Pca2₁ phase. This work provides new insight into the mechanisms controlling and/or accompanying polarization wake-up in hafnium oxide-based ferroelectrics.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)

Grant/Contract Number:: NA0003525; SC0021118; AC02-05CH11231

OSTI ID:: 2428033

Report Number(s):: SAND--2024-10120J

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 11 Vol. 10; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (73)

Thin Film Analysis by X‐Ray Scattering Birkholz, Mario Wiley‐VCH Verlag GmbH & Co https://doi.org/10.1002/3527607595	book	January 2005
Physical Mechanisms behind the Field-Cycling Behavior of HfO ₂ -Based Ferroelectric Capacitors Pešić, Milan; Fengler, Franz Paul Gustav; Larcher, Luca Advanced Functional Materials, Vol. 26, Issue 25 https://doi.org/10.1002/adfm.201600590	journal	May 2016
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO ₂ Hoffmann, Michael; Pešić, Milan; Chatterjee, Korok Advanced Functional Materials, Vol. 26, Issue 47 https://doi.org/10.1002/adfm.201602869	journal	October 2016
Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf _0.5 Zr _0.5 O ₂ Thin Films Fields, Shelby S.; Smith, Sean W.; Fancher, Chris M. Advanced Materials Interfaces, Vol. 8, Issue 10 https://doi.org/10.1002/admi.202100018	journal	March 2021
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO ₂ Thin Films Grimley, Everett D.; Schenk, Tony; Sang, Xiahan Advanced Electronic Materials, Vol. 2, Issue 9 https://doi.org/10.1002/aelm.201600173	journal	July 2016
Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics Fengler, Franz P. G.; Pešić, Milan; Starschich, Sergej Advanced Electronic Materials, Vol. 3, Issue 4 https://doi.org/10.1002/aelm.201600505	journal	March 2017
On the Origin of the Large Remanent Polarization in La:HfO ₂ Schenk, Tony; Fancher, Chris M.; Park, Min Hyuk Advanced Electronic Materials, Vol. 5, Issue 12 https://doi.org/10.1002/aelm.201900303	journal	September 2019
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films Fields, Shelby S.; Cai, Truong; Jaszewski, Samantha T. Advanced Electronic Materials, Vol. 8, Issue 12 https://doi.org/10.1002/aelm.202200601	journal	August 2022
Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf_0.5Zr_0.5O₂ Thin Film Capacitors Saini, Balreen; Huang, Fei; Choi, Yoon‐Young Advanced Electronic Materials, Vol. 9, Issue 6 https://doi.org/10.1002/aelm.202300016	journal	April 2023
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide Lederer, Maximilian; Olivo, Ricardo; Lehninger, David physica status solidi (RRL) – Rapid Research Letters, Vol. 15, Issue 5 https://doi.org/10.1002/pssr.202100086	journal	May 2021
Elastic properties of ceramic oxides used in solid oxide fuel cells (SOFC) Selçuk, A.; Atkinson, A. Journal of the European Ceramic Society, Vol. 17, Issue 12 https://doi.org/10.1016/S0955-2219(96)00247-6	journal	January 1997
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films Islamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey V. Acta Materialia, Vol. 166 https://doi.org/10.1016/j.actamat.2018.12.008	journal	March 2019
Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering Jaszewski, Samantha T.; Hoglund, Eric R.; Costine, Anna Acta Materialia, Vol. 239 https://doi.org/10.1016/j.actamat.2022.118220	journal	October 2022
Elastic properties of cubic, tetragonal and monoclinic ZrO2 from first-principles calculations Zhao, Xu-Shan; Shang, Shun-Li; Liu, Zi-Kui Journal of Nuclear Materials, Vol. 415, Issue 1 https://doi.org/10.1016/j.jnucmat.2011.05.016	journal	August 2011
Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance Mittmann, Terence; Fengler, Franz P. G.; Richter, Claudia Microelectronic Engineering, Vol. 178 https://doi.org/10.1016/j.mee.2017.04.031	journal	June 2017
Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates Shiraishi, Takahisa; Katayama, Kiliha; Yokouchi, Tatsuhiko Materials Science in Semiconductor Processing, Vol. 70 https://doi.org/10.1016/j.mssp.2016.12.008	journal	November 2017
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan Solid-State Electronics, Vol. 88 https://doi.org/10.1016/j.sse.2013.04.013	journal	October 2013
Synchrotron infrared nano-spectroscopy and -imaging Bechtel, Hans A.; Johnson, Samuel C.; Khatib, Omar Surface Science Reports, Vol. 75, Issue 3 https://doi.org/10.1016/j.surfrep.2020.100493	journal	August 2020
Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study Batra, Rohit; Huan, Tran Doan; Jones, Jacob L. The Journal of Physical Chemistry C, Vol. 121, Issue 8 https://doi.org/10.1021/acs.jpcc.6b11972	journal	February 2017
Wake-Up in a Hf _0.5 Zr _0.5 O ₂ Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching Chouprik, Anastasia; Spiridonov, Maxim; Zarubin, Sergei ACS Applied Electronic Materials, Vol. 1, Issue 3 https://doi.org/10.1021/acsaelm.8b00046	journal	February 2019
Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films Fields, Shelby S.; Smith, Sean W.; Ryan, Philip J. ACS Applied Materials & Interfaces, Vol. 12, Issue 23 https://doi.org/10.1021/acsami.0c03570	journal	May 2020
Effect of Zr Content on the Wake-Up Effect in Hf _{1– x} Zr _x O ₂ Films Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin ACS Applied Materials & Interfaces, Vol. 8, Issue 24 https://doi.org/10.1021/acsami.6b03586	journal	June 2016
Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films Jaszewski, Samantha T.; Calderon, Sebastian; Shrestha, Bishal ACS Nano, Vol. 17, Issue 23 https://doi.org/10.1021/acsnano.3c08371	journal	November 2023
The Occurrence of Metastable Tetragonal Zirconia as a Crystallite Size Effect Garvie, Ronald C. The Journal of Physical Chemistry, Vol. 69, Issue 4 https://doi.org/10.1021/j100888a024	journal	April 1965
Ferroelectricity in Simple Binary ZrO ₂ and HfO ₂ Müller, Johannes; Böscke, Tim S.; Schröder, Uwe Nano Letters, Vol. 12, Issue 8 https://doi.org/10.1021/nl302049k	journal	July 2012
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film Cheng, Yan; Gao, Zhaomeng; Ye, Kun Hee Nature Communications, Vol. 13, Issue 1 https://doi.org/10.1038/s41467-022-28236-5	journal	February 2022
Enhanced ferroelectricity in ultrathin films grown directly on silicon Cheema, Suraj S.; Kwon, Daewoong; Shanker, Nirmaan Nature, Vol. 580, Issue 7804 https://doi.org/10.1038/s41586-020-2208-x	journal	April 2020
Hafnium zirconate gate dielectric for advanced gate stack applications Hegde, R. I.; Triyoso, D. H.; Samavedam, S. B. Journal of Applied Physics, Vol. 101, Issue 7 https://doi.org/10.1063/1.2716399	journal	April 2007
Ferroelectricity in hafnium oxide thin films Böscke, T. S.; Müller, J.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 10 https://doi.org/10.1063/1.3634052	journal	September 2011
Ferroelectric Zr _0.5 Hf _0.5 O ₂ thin films for nonvolatile memory applications Müller, J.; Böscke, T. S.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3636417	journal	September 2011
Phase transitions in ferroelectric silicon doped hafnium oxide Böscke, T. S.; Teichert, St.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3636434	journal	September 2011
Ferroelectricity in yttrium-doped hafnium oxide Müller, J.; Schröder, U.; Böscke, T. S. Journal of Applied Physics, Vol. 110, Issue 11 https://doi.org/10.1063/1.3667205	journal	December 2011
The effects of crystallographic orientation and strain of thin Hf _0.5 Zr _0.5 O ₂ film on its ferroelectricity Hyuk Park, Min; Joon Kim, Han; Jin Kim, Yu Applied Physics Letters, Vol. 104, Issue 7 https://doi.org/10.1063/1.4866008	journal	February 2014
The origin of ferroelectricity in Hf _1−x Zr _x O ₂ : A computational investigation and a surface energy model Materlik, R.; Künneth, C.; Kersch, A. Journal of Applied Physics, Vol. 117, Issue 13 https://doi.org/10.1063/1.4916707	journal	April 2015
On the structural origins of ferroelectricity in HfO ₂ thin films Sang, Xiahan; Grimley, Everett D.; Schenk, Tony Applied Physics Letters, Vol. 106, Issue 16 https://doi.org/10.1063/1.4919135	journal	April 2015
Stabilizing the ferroelectric phase in doped hafnium oxide Hoffmann, M.; Schroeder, U.; Schenk, T. Journal of Applied Physics, Vol. 118, Issue 7 https://doi.org/10.1063/1.4927805	journal	August 2015
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide Starschich, S.; Menzel, S.; Böttger, U. Applied Physics Letters, Vol. 108, Issue 3 https://doi.org/10.1063/1.4940370	journal	January 2016
Impact of mechanical stress on ferroelectricity in (Hf _0.5 Zr _0.5 )O ₂ thin films Shiraishi, Takahisa; Katayama, Kiliha; Yokouchi, Tatsuhiko Applied Physics Letters, Vol. 108, Issue 26 https://doi.org/10.1063/1.4954942	journal	June 2016
Enhancing ferroelectricity in dopant-free hafnium oxide Pal, Ashish; Narasimhan, Vijay Kris; Weeks, Stephen Applied Physics Letters, Vol. 110, Issue 2 https://doi.org/10.1063/1.4973928	journal	January 2017
Pyroelectric response in crystalline hafnium zirconium oxide (Hf _1- _x Zr _x O ₂ ) thin films Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A. Applied Physics Letters, Vol. 110, Issue 7 https://doi.org/10.1063/1.4976519	journal	February 2017
Large ferroelectric polarization of TiN/Hf _0.5 Zr _0.5 O ₂ /TiN capacitors due to stress-induced crystallization at low thermal budget Kim, Si Joon; Narayan, Dushyant; Lee, Jae-Gil Applied Physics Letters, Vol. 111, Issue 24 https://doi.org/10.1063/1.4995619	journal	December 2017
On the relationship between field cycling and imprint in ferroelectric Hf _0.5 Zr _0.5 O ₂ Fengler, F. P. G.; Hoffmann, M.; Slesazeck, S. Journal of Applied Physics, Vol. 123, Issue 20 https://doi.org/10.1063/1.5026424	journal	May 2018
Ferroelectricity mediated by ferroelastic domain switching in HfO ₂ -based epitaxial thin films Shimizu, Takao; Mimura, Takanori; Kiguchi, Takanori Applied Physics Letters, Vol. 113, Issue 21 https://doi.org/10.1063/1.5055258	journal	November 2018
Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (Hf _x Zr _1−x )O ₂ thin films Hsain, H. Alex; Lee, Younghwan; Parsons, Gregory Applied Physics Letters, Vol. 116, Issue 19 https://doi.org/10.1063/5.0002835	journal	May 2020
Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide Islamov, Damir R.; Zalyalov, Timur M.; Orlov, Oleg M. Applied Physics Letters, Vol. 117, Issue 16 https://doi.org/10.1063/5.0023554	journal	October 2020
3D structure–property correlations of electronic and energy materials by tomographic atomic force microscopy Song, Jingfeng; Zhou, Yuanyuan; Huey, Bryan D. Applied Physics Letters, Vol. 118, Issue 8 https://doi.org/10.1063/5.0040984	journal	February 2021
Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf _1- _x Zr _x O ₂ thin films Fields, Shelby S.; Olson, David H.; Jaszewski, Samantha T. Applied Physics Letters, Vol. 118, Issue 10 https://doi.org/10.1063/5.0044702	journal	March 2021
Enhancement of ferroelectricity and orientation in solution-derived hafnia thin films through heterogeneous grain nucleation Schenk, Tony; Bencan, Andreja; Drazic, Goran Applied Physics Letters, Vol. 118, Issue 16 https://doi.org/10.1063/5.0045966	journal	April 2021
Wake-up and fatigue mechanisms in ferroelectric Hf _0.5 Zr _0.5 O ₂ films with symmetric RuO ₂ electrodes Fields, Shelby S.; Smith, Sean W.; Jaszewski, Samantha T. Journal of Applied Physics, Vol. 130, Issue 13 https://doi.org/10.1063/5.0064145	journal	October 2021
Erratum: “Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films” [Appl. Phys. Lett. 118, 102901 (2021)] Fields, Shelby S.; Olson, David H.; Jaszewski, Samantha T. Applied Physics Letters, Vol. 119, Issue 12 https://doi.org/10.1063/5.0068886	journal	September 2021
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance Ihlefeld, Jon F.; Jaszewski, Samantha T.; Fields, Shelby S. Applied Physics Letters, Vol. 121, Issue 24 https://doi.org/10.1063/5.0129546	journal	December 2022
Evidence for ferroelastic switching and nanoscopic domains in polycrystalline Si-doped hafnium oxide films Lederer, M.; Mart, C.; Kämpfe, T. Applied Physics Letters, Vol. 123, Issue 2 https://doi.org/10.1063/5.0146593	journal	July 2023
Ultrabroadband infrared nanospectroscopic imaging Bechtel, H. A.; Muller, E. A.; Olmon, R. L. Proceedings of the National Academy of Sciences, Vol. 111, Issue 20 https://doi.org/10.1073/pnas.1400502111	journal	May 2014
Strain effect on the stability in ferroelectric HfO ₂ simulated by first-principles calculations Fan, Sheng-Ting; Chen, Yun-Wen; Liu, C. W. Journal of Physics D: Applied Physics, Vol. 53, Issue 23 https://doi.org/10.1088/1361-6463/ab7fd4	journal	April 2020
High-density ZrO 2 and HfO 2 : Crystalline structures and equations of state Desgreniers, Serge; Lagarec, Ken Physical Review B, Vol. 59, Issue 13 https://doi.org/10.1103/PhysRevB.59.8467	journal	April 1999
The crystal structure of ZrO2 and HfO2 Adam, J.; Rogers, M. D. Acta Crystallographica, Vol. 12, Issue 11 https://doi.org/10.1107/S0365110X59002742	journal	November 1959
The crystal structure of tetragonal ZrO2 Teufer, G. Acta Crystallographica, Vol. 15, Issue 11 https://doi.org/10.1107/S0365110X62003114	journal	November 1962
New tools for calibrating diffraction setups Kieffer, J.; Valls, V.; Blanc, N. Journal of Synchrotron Radiation, Vol. 27, Issue 2 https://doi.org/10.1107/S1600577520000776	journal	February 2020
Impact of Oxygen Vacancy Content in Ferroelectric HZO films on the Device Performance Mittmann, T.; Materano, M.; Chang, S. -C. 2020 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM13553.2020.9372097	conference	December 2020
Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films Mart, C.; Viegas, A.; Esslinger, S. 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) https://doi.org/10.1109/IFCS-ISAF41089.2020.9234892	conference	July 2020
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory Kruv, A.; McMitchell, S. R. C.; Clima, S. 2021 IEEE International Reliability Physics Symposium (IRPS) https://doi.org/10.1109/IRPS46558.2021.9405159	conference	March 2021
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors Mueller, Stefan; Summerfelt, Scott R.; Muller, Johannes IEEE Electron Device Letters, Vol. 33, Issue 9 https://doi.org/10.1109/LED.2012.2204856	journal	September 2012
Ionizing Radiation Effect on Memory Characteristics for HfO₂-Based Ferroelectric Field-Effect Transistors Chen, Kuen-Yi; Tsai, Yi-Shan; Wu, Yung-Hsien IEEE Electron Device Letters, Vol. 40, Issue 9 https://doi.org/10.1109/LED.2019.2931826	journal	September 2019
Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing Kim, Taeho; Jeon, Sanghun IEEE Transactions on Electron Devices, Vol. 65, Issue 5 https://doi.org/10.1109/TED.2018.2816968	journal	May 2018
High-k Hf _x Zr _1-x O₂ Ferroelectric Insulator by Utilizing High Pressure Anneal Das, Dipjyoti; Jeon, Sanghun IEEE Transactions on Electron Devices, Vol. 67, Issue 6 https://doi.org/10.1109/TED.2020.2985635	journal	June 2020
The Svstern Zirconia-Hafnia Ruh, Robert; Garrett, H. J.; Domagala, R. F. Journal of the American Ceramic Society, Vol. 51, Issue 1 https://doi.org/10.1111/j.1151-2916.1968.tb11822.x	journal	January 1968
Crystal Structure of Monoclinic Hafnia and Comparison with Monoclinic Zirconia Ruh, Robert; Corfield, Peter W. R. Journal of the American Ceramic Society, Vol. 53, Issue 3 https://doi.org/10.1111/j.1151-2916.1970.tb12052.x	journal	March 1970
Polymorphic Behavior of Thin Evaporated Films of Zirconium and Hafnium Oxides El-Shanshoury, I. A.; Rudenko, V. A.; Ibrahim, I. A. Journal of the American Ceramic Society, Vol. 53, Issue 5 https://doi.org/10.1111/j.1151-2916.1970.tb12090.x	journal	May 1970
Characterization and Stabilization of Metastable Tetragonal ZrO₂ Mitsuhashi, T.; Ichihara, M.; Tatsuke, U. Journal of the American Ceramic Society, Vol. 57, Issue 2 https://doi.org/10.1111/j.1151-2916.1974.tb10823.x	journal	February 1974
Elastic Properties of Monoclinic Hafnium Oxide at Room Temperature Dole, S. L.; Hunter, O.; Wooge, C. J. Journal of the American Ceramic Society, Vol. 60, Issue 11-12 https://doi.org/10.1111/j.1151-2916.1977.tb14088.x	journal	November 1977
Monoclinic Crystal Structures of ZrO2 and HfO2 Refined from X-ray Powder Diffraction Data Hann, Raiford E.; Suitch, Paul R.; Pentecost, Joseph L. Journal of the American Ceramic Society, Vol. 68, Issue 10 https://doi.org/10.1111/j.1151-2916.1985.tb11534.x	journal	October 1985
Thermodynamic stability of binary oxides in contact with silicon Hubbard, K. J.; Schlom, D. G. Journal of Materials Research, Vol. 11, Issue 11 https://doi.org/10.1557/JMR.1996.0350	journal	November 1996
Gate Oxides Beyond SiO ₂ Schlom, Darrell G.; Guha, Supratik; Datta, Suman MRS Bulletin, Vol. 33, Issue 11 https://doi.org/10.1557/mrs2008.221	journal	November 2008

Similar Records

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Journal Article · Fri May 15 00:00:00 EDT 2020 · ACS Applied Materials and Interfaces · OSTI ID:1639052

Related Subjects

X-ray diffraction
ferroelectric hafnium oxide
stress
thin film

Phase Transformations Driving Biaxial Stress Reduction During Wake-Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

Citation Formats

References (73)

Similar Records

Related Subjects