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Enhanced Dirac node separation in the strained Cd3 As2 topological semimetal

Journal Article · · Physical Review. B
 [1];  [2];  [3];  [3];  [4];  [5];  [4];  [3];  [2];  [2]
  1. Johannes Kepler Univ. Linz (Austria)
  2. Laboratoire de Physique de l’Ecole normale supérieure (LPENS), Paris (France); Centre National de la Recherche Scientifique (CNRS) (France)
  3. Univ. of California, Santa Barbara, CA (United States)
  4. University of Notre Dame, IN (United States)
  5. Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasirelativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination of magneto-optical infrared spectroscopy and high-resolution x-ray-diffraction studies performed on epitaxial films. In these thin films, we observe a giant enhancement of the node separation in momentum space by close to a factor of 4. A combination of experimental measurements and theoretical modeling allows us to relate the origin of this enhancement to a strengthening of the topological band inversion driven by lattice strain. Finally, our results demonstrate how strain can be used as a knob to tune the topological properties of semimetals and to potentially enhance their performance and response for various applications.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOD; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
2427979
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 16 Vol. 106; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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