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All‐Polymer Bulk‐Heterojunction Organic Electrochemical Transistors with Balanced Ionic and Electronic Transport

Journal Article · · Advanced Materials
 [1];  [2];  [1];  [3];  [4];  [1];  [5];  [6];  [4];  [1]
  1. School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore
  2. Institute of Sustainability for Chemical Engineering and Environment (ISCE2) Agency of Science Technology and Research (A*STAR) 1 Pesek Road Singapore 627833 Singapore
  3. School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore
  4. Department of Chemical and Biological Engineering Princeton University Princeton NJ 08544 USA
  5. Institute of Materials Research and Engineering (IMRE) Agency of Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis Singapore 138634 Singapore
  6. Institute of Sustainability for Chemical Engineering and Environment (ISCE2) Agency of Science Technology and Research (A*STAR) 1 Pesek Road Singapore 627833 Singapore; Institute of Materials Research and Engineering (IMRE) Agency of Science Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis Singapore 138634 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117543 Singapore
Abstract

The rapid development of organic electrochemical transistor (OECTs)‐based circuits brings new opportunities for next‐generation integrated bioelectronics. The all‐polymer bulk‐heterojunction (BHJ) offers an attractive, inexpensive alternative to achieve efficient ambipolar OECTs, and building blocks of logic circuits constructed from them, but have not been investigated to date. Here, the first all‐polymer BHJ‐based OECTs are reported, consisting of a blend of new p‐type ladder conjugated polymer and a state‐of‐the‐art n‐type ladder polymer. The whole ladder‐type polymer BHJ also proves that side chains are not necessary for good ion transport. Instead, the polymer nanostructures play a critical role in the ion penetration and transportation and thus in the device performance. It also provides a facile strategy and simplifies the fabrication process, forgoing the need to pattern multiple active layers. In addition, the development of complementary metal–oxide–semiconductor (CMOS)‐like OECTs allows the pursuit of advanced functional logic circuitry, including inverters and NAND gates, as well as for amplifying electrophysiology signals. This work opens a new approach to the design of new materials for OECTs and will contribute to the development of organic heterojunctions for ambipolar OECTs toward high‐performing logic circuits.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0012704
OSTI ID:
2425450
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 42 Vol. 34; ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English

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