Oxygen reduction at the interface YSZ/LaMnO{sub 3} prepared by vapor phase processes
- Kyoto Univ. (Japan)
Dense and thin LaMnO{sub 32} and YSZ was deposited on porous La{sub 0.85}(Sr) in order to study oxygen redox behavior at an interface of LaMnO{sub 3}/YSZ. YSZ film was deposited by the CVD-EVD method on porous substrate at firs, LaMnO{sub 3} film was deposited on the YSZ film by the EVD method. Results of the AC impedance measurements showed that electrode interface conductivity ({sigma}{sub e}) was directly proportional to the surface area, while {sigma}{sub e} v.s. TPB (Three Phase Boundary) length plot did not show linear relationship. It was concluded that LaMnO{sub 3} surface as well as TPB region, is an active site for oxygen redox reaction when the LaMnO{sub 3} film electrode is very thin (about few {micro}m).
- OSTI ID:
- 242514
- Report Number(s):
- CONF-950683--; ISBN 1-56677-095-5
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
40 CHEMISTRY
CATHODES
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC IMPEDANCE
ELECTROCHEMICAL COATING
LANTHANUM OXIDES
MANGANESE OXIDES
REDOX REACTIONS
SCANNING ELECTRON MICROSCOPY
SOLID ELECTROLYTE FUEL CELLS
STRONTIUM OXIDES
X-RAY DIFFRACTION
YTTRIUM OXIDES
ZIRCONIUM OXIDES