Electronic Coupling of Metal–to–Insulator Transitions in Nickelate–Based Heterostructures
Journal Article
·
· Advanced Electronic Materials
- Univ. of Geneva (Switzerland); OSTI
- Univ. of Geneva (Switzerland); Ecole Polytechnique Federale Lausanne (EPFL) (Switzerland)
- Univ. of Geneva (Switzerland)
- Stanford Univ., CA (United States). Stanford Institute for Materials and Energy Sciences (SIMES)
- Ecole Polytechnique Federale Lausanne (EPFL) (Switzerland)
- Northwestern Univ., Evanston, IL (United States)
In rare earth nickelates, the metal-to-insulator transition observed as a function of temperature can be described using an electronic and a structural order parameter. The electronic one is linked to the electronic disproportionation observed below the transition temperature and the structural one characterizes the breathing mode that develops in the low temperature phase. Here SmNiO3/NdNiO3 superlattices are grown with insulating LaAlO3 spacer layers to study the unusual coupling of metal-to- insulator transitions observed at SmNiO3/NdNiO3 interfaces and determine the role of the two order parameters. Temperature-dependent transport measurements reveal that a single unit cell of LaAlO3 inserted between SmNiO3 and NdNiO3 leads to a complete decoupling of the metal-to-insulator transitions suggesting that the order parameter controlling the coupling is the electronic one.
- Research Organization:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0001209
- OSTI ID:
- 2422333
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 5 Vol. 9; ISSN 2199-160X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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