Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Zhang, Yuxuan; Thirupakuzi Vangipuram, Vijay Gopal; Zhang, Kaitian; Zhao, Hongping

doi:10.1063/5.0144584

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Journal Article · Mon Apr 17 00:00:00 EDT 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0144584· OSTI ID:2422288

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OSTI

Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.

View Accepted Manuscript (DOE)

Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001036

OSTI ID:: 2422288

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 122; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (29)

m -Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m -Plane GaN Substrates Tanaka, Atsushi; Ando, Yuto; Nagamatsu, Kentaro physica status solidi (a), Vol. 215, Issue 9 https://doi.org/10.1002/pssa.201700645	journal	November 2017
Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications Zhang, Yuxuan; Chen, Zhaoying; Li, Wenbo physica status solidi (a), Vol. 218, Issue 6 https://doi.org/10.1002/pssa.202000469	journal	January 2021
Ab initio calculation for an initial growth process of GaN on (0001) and (000$ \bar 1 $) surfaces by vapor phase epitaxy Suzuki, Hikari; Togashi, Rie; Murakami, Hisashi physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880805	journal	May 2009
Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride Zhang, Yuxuan; Chen, Zhaoying; Zhang, Kaitian physica status solidi (RRL) – Rapid Research Letters, Vol. 15, Issue 6 https://doi.org/10.1002/pssr.202100202	journal	May 2021
GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm² Specific On‐Resistance Talesara, Vishank; Zhang, Yuxuan; Chen, Zhaoying physica status solidi (RRL) – Rapid Research Letters, Vol. 16, Issue 4 https://doi.org/10.1002/pssr.202100599	journal	January 2022
Redistribution of implanted dopants in GaN Cao, X. A.; Wilson, R. G.; Zolper, J. C. Journal of Electronic Materials, Vol. 28, Issue 3 https://doi.org/10.1007/s11664-999-0025-y	journal	March 1999
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Koleske, D. D.; Wickenden, A. E.; Henry, R. L. Journal of Crystal Growth, Vol. 242, Issue 1-2 https://doi.org/10.1016/S0022-0248(02)01348-9	journal	July 2002
Resistivity control in unintentionally doped GaN films grown by MOCVD Wickenden, A. E.; Koleske, D. D.; Henry, R. L. Journal of Crystal Growth, Vol. 260, Issue 1-2 https://doi.org/10.1016/j.jcrysgro.2003.08.024	journal	January 2004
High growth rate metal organic vapor phase epitaxy GaN Matsumoto, Koh; Tokunaga, Hiroki; Ubukata, Akinori Journal of Crystal Growth, Vol. 310, Issue 17 https://doi.org/10.1016/j.jcrysgro.2008.06.009	journal	August 2008
Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition Piao, Guanxi; Ikenaga, Kazutada; Yano, Yoshiki Journal of Crystal Growth, Vol. 456 https://doi.org/10.1016/j.jcrysgro.2016.08.030	journal	December 2016
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Nagamatsu, Kentaro; Ando, Yuto; Kono, Tsukasa Journal of Crystal Growth, Vol. 512 https://doi.org/10.1016/j.jcrysgro.2019.02.013	journal	April 2019
Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Dupuis, Russell D. Journal of Crystal Growth, Vol. 602 https://doi.org/10.1016/j.jcrysgro.2022.126982	journal	January 2023
A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride Danielsson, Örjan; Li, Xun; Ojamäe, Lars Journal of Materials Chemistry C, Vol. 4, Issue 4 https://doi.org/10.1039/C5TC03989D	journal	January 2016
The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical Burton, J. A.; Prim, R. C.; Slichter, W. P. The Journal of Chemical Physics, Vol. 21, Issue 11 https://doi.org/10.1063/1.1698728	journal	November 1953
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films Yang, J.; Zhao, D. G.; Jiang, D. S. Journal of Applied Physics, Vol. 115, Issue 16 https://doi.org/10.1063/1.4873957	journal	April 2014
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Cao, Y.; Chu, R.; Li, R. Applied Physics Letters, Vol. 108, Issue 6 https://doi.org/10.1063/1.4941814	journal	February 2016
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Kaess, Felix; Mita, Seiji; Xie, Jingqiao Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962017	journal	September 2016
Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition Golgir, Hossein Rabiee; Zhou, Yun Shen; Li, Dawei Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962426	journal	September 2016
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN Lyons, J. L.; Janotti, A.; Van de Walle, C. G. Physical Review B, Vol. 89, Issue 3 https://doi.org/10.1103/PhysRevB.89.035204	journal	January 2014
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Lee, Hyun-Soo; Zhang, Yuxuan; Chen, Zhaoying IEEE Transactions on Electron Devices, Vol. 67, Issue 9 https://doi.org/10.1109/TED.2020.3007133	journal	September 2020
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions Yates, Luke; Gunning, Brendan P.; Crawford, Mary H. IEEE Transactions on Electron Devices, Vol. 69, Issue 4 https://doi.org/10.1109/TED.2022.3154665	journal	April 2022
Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence Nishinaga, Tatau; Sasaoka, Chiaki; Pak, Kangsa Japanese Journal of Applied Physics, Vol. 28, Issue 5R https://doi.org/10.1143/JJAP.28.836	journal	May 1989
Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate Talesara, Vishank; Zhang, Yuxuan; Chen, Zhaoying Journal of Materials Research, Vol. 36, Issue 24 https://doi.org/10.1557/s43578-021-00435-8	journal	December 2021
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE Ciarkowski, Timothy; Allen, Noah; Carlson, Eric Materials, Vol. 12, Issue 15 https://doi.org/10.3390/ma12152455	journal	August 2019
Why do electron traps at E _C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? Narita, Tetsuo; Horita, Masahiro; Tomita, Kazuyoshi Japanese Journal of Applied Physics, Vol. 59, Issue 10 https://doi.org/10.35848/1347-4065/abb9ca	journal	October 2020
Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition Jiang, Lingrong; Liu, Jianping; Tian, Aiqin Applied Physics Express, Vol. 12, Issue 5 https://doi.org/10.7567/1882-0786/ab0da2	journal	April 2019
5.0 kV breakdown-voltage vertical GaN p–n junction diodes Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa Japanese Journal of Applied Physics, Vol. 57, Issue 4S https://doi.org/10.7567/JJAP.57.04FG09	journal	February 2018

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