A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Naclerio, Andrew E.; Kidambi, Piran R.

doi:10.1002/adma.202207374

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Journal Article · Thu Nov 03 00:00:00 EDT 2022 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202207374· OSTI ID:2422176

Naclerio, Andrew E. ^[1]; ^[2]

Vanderbilt Univ., Nashville, TN (United States); OSTI
Vanderbilt Univ., Nashville, TN (United States)

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, in this work, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

View Accepted Manuscript (DOE)

Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0022915

OSTI ID:: 2422176

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 6 Vol. 35; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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