Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice
Journal Article
·
· Nature Communications
- Rensselaer Polytechnic Inst., Troy, NY (United States); Rensselaer Polytechnic Institute, Troy, NY (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Univ. of Texas at Dallas, TX (United States)
- Arizona State Univ., Tempe, AZ (United States)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
- Univ. of California, Riverside, CA (United States)
Moiré superlattices of semiconducting transition metal dichalcogenides enable unprecedented spatial control of electron wavefunctions, leading to emerging quantum states. The breaking of translational symmetry further introduces a new degree of freedom: high symmetry moiré sites of energy minima behaving as spatially separated quantum dots. We demonstrate the superposition between two moiré sites by constructing a trilayer WSe2/monolayer WS2 moiré heterojunction. The two moiré sites in the first layer WSe2 interfacing WS2 allow the formation of two different interlayer excitons, with the hole residing in either moiré site of the first layer WSe2 and the electron in the third layer WSe2. An electric field can drive the hybridization of either of the interlayer excitons with the intralayer excitons in the third WSe2 layer, realizing the continuous tuning of interlayer exciton hopping between two moiré sites and a superposition of the two interlayer excitons, distinctively different from the natural trilayer WSe2.
- Research Organization:
- Arizona State Univ., Tempe, AZ (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0020653
- OSTI ID:
- 2421626
- Journal Information:
- Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 14; ISSN 2041-1723
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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