Band inversion-driven warping and high valley degeneracy

Toriyama, Michael Y.; Snyder, G. Jeffrey

doi:10.1016/j.xcrp.2023.101392

Band inversion-driven warping and high valley degeneracy

Journal Article · Wed Apr 26 00:00:00 EDT 2023 · Cell Reports Physical Science

DOI:https://doi.org/10.1016/j.xcrp.2023.101392· OSTI ID:2421560

^[1]; Snyder, G. Jeffrey ^[2]

Northwestern University, Evanston, IL (United States); OSTI
Northwestern University, Evanston, IL (United States)

Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.

View Accepted Manuscript (DOE)

Research Organization:: Krell Institute, Ames, IA (United States)

Sponsoring Organization:: US Department of Commerce; USDOE Office of Science (SC)

Grant/Contract Number:: SC0020347

OSTI ID:: 2421560

Journal Information:: Cell Reports Physical Science, Journal Name: Cell Reports Physical Science Journal Issue: 5 Vol. 4; ISSN 2666-3864

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Band inversion-driven warping and high valley degeneracy

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