Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Sethi, Pankaj; Sanz-Hernández, Dédalo; Godel, Florian; Krishnia, Sachin; Ajejas, Fernando; Mizrahi, Alice; Cros, Vincent; Marković, Danijela; Grollier, Julie

doi:10.1103/physrevapplied.19.064018

Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Journal Article · Tue Jun 06 00:00:00 EDT 2023 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.19.064018· OSTI ID:2421091

^[1]; ^[2]; Godel, Florian ^[2]; Krishnia, Sachin ^[2]; ^[2]; Mizrahi, Alice ^[2]; ^[2]; Marković, Danijela ^[2]; Grollier, Julie ^[2]

Univ. Paris-Saclay, Palaiseau (France); Univ. of California, San Diego, CA (United States); OSTI
Univ. Paris-Saclay, Palaiseau (France)

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H_k₂ = 0.47 mT) and first-order ($$H^{eff}_{k_1}$$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Agence Nationale de la Recherche (ANR)

Grant/Contract Number:: SC0019273

OSTI ID:: 2421091

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 19; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
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Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

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