Low-power anisotropic molecular electronic memristors

Huang, Yulong; Hu, Yong; Ren, Shenqiang

doi:10.1016/j.apmt.2022.101569

Low-power anisotropic molecular electronic memristors

Journal Article · Thu Jul 21 00:00:00 EDT 2022 · Applied Materials Today

DOI:https://doi.org/10.1016/j.apmt.2022.101569· OSTI ID:2420848

^[1]; Hu, Yong ^[2]; Ren, Shenqiang ^[2]

Univ. at Buffalo, NY (United States); OSTI
Univ. at Buffalo, NY (United States)

A molecular electronic memristor, programmable resistive memory device, promises to revolutionize next-generation flexible data storage units, offering fast, dense and ultralow power solutions. Here we report anisotropic resistive switching in molecular κ-(BEDT-TTF)₂Cu[N(CN)₂]Cl memristors, consisting of alternatively segregated bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and Cu[N(CN)₂]Cl layers. Electron resistance switching behavior controlled by charge tunneling in molecular memristors show a low set voltage of 0.5 V (10 V/cm) with the ON/OFF ratio of 2.3×10³ along a-axis and a high-level endurance of 1.25×10⁴ cycles along all axes. Finally, the findings of such molecular electronic crystals promise for low-power data storage memristors.

View Accepted Manuscript (DOE)

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0018631

OSTI ID:: 2420848

Alternate ID(s):: OSTI ID: 1878414

Journal Information:: Applied Materials Today, Journal Name: Applied Materials Today Vol. 29; ISSN 2352-9407

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (26)

Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications Qian, Kai; Tay, Roland Yingjie; Nguyen, Viet Cuong Advanced Functional Materials, Vol. 26, Issue 13 https://doi.org/10.1002/adfm.201504771	journal	February 2016
Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory Zhu, Xiaojian; Su, Wenjing; Liu, Yiwei Advanced Materials, Vol. 24, Issue 29 https://doi.org/10.1002/adma.201201506	journal	June 2012
Polymer-Based Resistive Memory Materials and Devices Lin, Wen-Peng; Liu, Shu-Juan; Gong, Tao Advanced Materials, Vol. 26, Issue 4 https://doi.org/10.1002/adma.201302637	journal	December 2013
Resistive Switching Memory Devices Based on Proteins Wang, Hong; Meng, Fanben; Zhu, Bowen Advanced Materials, Vol. 27, Issue 46 https://doi.org/10.1002/adma.201405728	journal	March 2015
Organic Memory and Memristors: From Mechanisms, Materials to Devices Yuan, Lei; Liu, Shuzhi; Chen, Weilin Advanced Electronic Materials, Vol. 7, Issue 11 https://doi.org/10.1002/aelm.202100432	journal	July 2021
Photoinduced switching of electrical conductivity and its memory effect in the organic conductor α-(BEDT-TTF)2I3: Dependence on voltage height and temporal width of pulsed voltages Iimori, T.; Naito, T.; Ohta, N. Physica B: Condensed Matter, Vol. 405, Issue 11 https://doi.org/10.1016/j.physb.2009.10.031	journal	June 2010
Emerged Metallicity in Molecular Ferromagnetic Wires Huang, Yulong; Mitchell, Travis; Yost, Dillon C. Nano Letters, Vol. 21, Issue 22 https://doi.org/10.1021/acs.nanolett.1c03663	journal	November 2021
A Memory Effect Controlled by a Pulsed Voltage in Photoinduced Conductivity Switching in an Organic Charge-Transfer Salt Iimori, Toshifumi; Naito, Toshio; Ohta, Nobuhiro Journal of the American Chemical Society, Vol. 129, Issue 12 https://doi.org/10.1021/ja068791d	journal	March 2007
Insulator–Metal Transitions Induced by Electric Field and Photoirradiation in Organic Mott Insulator Deuterated κ-(BEDT-TTF) ₂ Cu[N(CN) ₂ ]Br Sabeth, Farzana; Iimori, Toshifumi; Ohta, Nobuhiro Journal of the American Chemical Society, Vol. 134, Issue 16 https://doi.org/10.1021/ja302725e	journal	April 2012
Organic Memory Devices Based on a Bis-Cyclometalated Alkynylgold(III) Complex Au, Vonika Ka-Man; Wu, Di; Yam, Vivian Wing-Wah Journal of the American Chemical Society, Vol. 137, Issue 14 https://doi.org/10.1021/jacs.5b02113	journal	April 2015
Unprecedented Optoelectronic Function in Organic Conductor: Memory Effect of Photoswitching Controlled by Voltage Pulse Width Iimori, Toshifumi; Naito, Toshio; Ohta, Nobuhiro The Journal of Physical Chemistry C, Vol. 113, Issue 11 https://doi.org/10.1021/jp810351c	journal	February 2009
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
Robust resistive memory devices using solution-processable metal-coordinated azo aromatics Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P. Nature Materials, Vol. 16, Issue 12 https://doi.org/10.1038/nmat5009	journal	October 2017
Memory leads the way to better computing Wong, H. -S. Philip; Salahuddin, Sayeef Nature Nanotechnology, Vol. 10, Issue 3 https://doi.org/10.1038/nnano.2015.29	journal	March 2015
Memory devices and applications for in-memory computing Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan Nature Nanotechnology, Vol. 15, Issue 7 https://doi.org/10.1038/s41565-020-0655-z	journal	March 2020
In-memory computing with resistive switching devices Ielmini, Daniele; Wong, H. -S. Philip Nature Electronics, Vol. 1, Issue 6 https://doi.org/10.1038/s41928-018-0092-2	journal	June 2018
Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements Wang, Chengyuan; Gu, Peiyang; Hu, Benlin Journal of Materials Chemistry C, Vol. 3, Issue 39 https://doi.org/10.1039/C5TC02080H	journal	January 2015
Organic and hybrid resistive switching materials and devices Gao, Shuang; Yi, Xiaohui; Shang, Jie Chemical Society Reviews, Vol. 48, Issue 6 https://doi.org/10.1039/C8CS00614H	journal	January 2019
Crystal growth of the layered organic antiferromagnet, deuterated κ-(BEDT-TTF)2Cu[N(CN)2]Br Angel, Julia; Uehara, Tomotaka; Shimada, Junichi TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY: TMREES, AIP Conference Proceedings https://doi.org/10.1063/1.4958584	conference	January 2016
Memory effects in complex materials and nanoscale systems Pershin, Yuriy V.; Di Ventra, Massimiliano Advances in Physics, Vol. 60, Issue 2 https://doi.org/10.1080/00018732.2010.544961	journal	April 2011
Emerging memories: resistive switching mechanisms and current status Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S. Reports on Progress in Physics, Vol. 75, Issue 7 https://doi.org/10.1088/0034-4885/75/7/076502	journal	June 2012
Phase-change memory function of correlated electrons in organic conductors Oike, H.; Kagawa, F.; Ogawa, N. Physical Review B, Vol. 91, Issue 4 https://doi.org/10.1103/PhysRevB.91.041101	journal	January 2015
Electrically induced phase transition in α − ( BEDT-TTF ) 2 I 3 : Indications for Dirac-like hot charge carriers Peterseim, T.; Ivek, T.; Schweitzer, D. Physical Review B, Vol. 93, Issue 24 https://doi.org/10.1103/PhysRevB.93.245133	journal	June 2016
Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway Yao, Zizhu; Pan, Liang; Liu, Lizhen Science Advances, Vol. 5, Issue 8 https://doi.org/10.1126/sciadv.aaw4515	journal	August 2019
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed Noé, Pierre; Verdy, Anthonin; d’Acapito, Francesco Science Advances, Vol. 6, Issue 9 https://doi.org/10.1126/sciadv.aay2830	journal	February 2020
Resistive Switching in Al/Graphene Oxide/Al Structure Panin, Gennady N.; Kapitanova, Olesya O.; Lee, Sang Wuk Japanese Journal of Applied Physics, Vol. 50, Issue 7 https://doi.org/10.1143/JJAP.50.070110	journal	July 2011

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36 MATERIALS SCIENCE
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ON/OFF ratio

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