Gate-Tunable Phonon Magnetic Moment in Bilayer Graphene

Zhang, Xiao-Wei; Ren, Yafei; Wang, Chong; Cao, Ting; Xiao, Di

doi:10.1103/physrevlett.130.226302

Gate-Tunable Phonon Magnetic Moment in Bilayer Graphene

Journal Article · Thu Jun 01 00:00:00 EDT 2023 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.130.226302· OSTI ID:2420195

^[1]; ^[2]; Wang, Chong ^[2]; Cao, Ting ^[2]; ^[2]

Univ. of Washington, Seattle, WA (United States); OSTI
Univ. of Washington, Seattle, WA (United States)

Here we develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phonon magnetic moments. Furthermore, the magnetic moment is highly tunable by changing the gate voltage. Our results firmly establish the necessity of the quantum mechanical treatment, and identify small-gap covalent materials as a promising platform for studying tunable phonon magnetic moment.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0012509

OSTI ID:: 2420195

Alternate ID(s):: OSTI ID: 1984003

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 22 Vol. 130; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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