Polaritonic Chern Insulators in Monolayer Semiconductors

He, Li; Wu, Jingda; Jin, Jicheng; Mele, Eugene J.; Zhen, Bo

doi:10.1103/physrevlett.130.043801

Polaritonic Chern Insulators in Monolayer Semiconductors

Journal Article · Tue Jan 24 04:00:00 EST 2023 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.130.043801· OSTI ID:2419286

He, Li ^[1]; ^[2]; Jin, Jicheng ^[3]; ^[3]; ^[3]

Univ. of Pennsylvania, Philadelphia, PA (United States); OSTI
Univ. of British Columbia, Vancouver, BC (Canada)
Univ. of Pennsylvania, Philadelphia, PA (United States)

Systems with strong light-matter interaction open up new avenues for studying topological phases of matter. Examples include exciton polaritons, mixed light-matter quasiparticles, where the topology of the polaritonic band structure arises from the collective coupling between matter wave and optical fields strongly confined in periodic dielectric structures. Distinct from light-matter interaction in a uniform environment, the spatially varying nature of the optical fields leads to a fundamental modification of the well-known optical selection rules, which were derived under the plane wave approximation. Here, in this study, we identify polaritonic Chern insulators by coupling valley excitons in transition metal dichalcogenides to photonic Bloch modes in a dielectric photonic crystal slab. We show that polaritonic Dirac points, which are markers for topological phase transition points, can be constructed from the collective coupling between valley excitons and photonic Dirac cones in the presence of both time-reversal and inversion symmetries. Lifting exciton valley degeneracy by breaking time-reversal symmetry leads to gapped polaritonic bands with nonzero Chern numbers. Through numerical simulations, we predict polaritonic chiral edge states residing inside the topological gaps. Our Letter paves the way for the further study of strong exciton-photon interaction in nanophotonic structures and for exploring polaritonic topological phases and their practical applications in polaritonic devices.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Pennsylvania, Philadelphia, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF)

Grant/Contract Number:: FG02-84ER45118

OSTI ID:: 2419286

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 130; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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