Application of Weak-Beam Dark-Field STEM for Dislocation Loop Analysis

Lin, Yan-Ru; Li, Yao; Zinkle, Steven J.; Arregui-Mena, Jose’ D.; Burke, M. Grace

doi:10.1093/mam/ozae067

Application of Weak-Beam Dark-Field STEM for Dislocation Loop Analysis

Journal Article · Mon Jul 15 00:00:00 EDT 2024 · Microscopy and Microanalysis

DOI:https://doi.org/10.1093/mam/ozae067· OSTI ID:2406779

^[1]; ^[2]; Zinkle, Steven J. ^[3]; Arregui-Mena, Jose’ D. ^[1]; Burke, M. Grace ^[4]

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Nanoscale dislocation loops formed by irradiation can significantly contribute to both irradiation hardening and embrittlement of materials when subjected to extreme nuclear reactor environments. Here, this study explores the application of weak-beam dark-field (WBDF) scanning transmission electron microscopy (STEM) methods for quantitative irradiation-induced defect analysis in crystalline materials, with a specific focus on dislocation loop imaging and analysis. A high-purity Fe-5 wt% Cr model alloy was irradiated with 8 MeV Fe²⁺ ions at 450°C to a fluence of 8.8 × 10¹⁹ m^-2, inducing dislocation loops for analysis. While transmission electron microscopy (TEM) has traditionally been the primary tool for dislocation imaging, recent advancements in STEM technology have reignited interest in using STEM for defect imaging. This study introduces and compares three WBDF STEM methods, demonstrating their effectiveness in suppressing background contrasts, isolating defect information for dislocation loop type classification, providing finer dislocation line images for small loop analysis, and presenting inside–outside contrast for identifying loop nature. Experimental findings indicate that WBDF STEM methods surpass traditional TEM approaches, yielding clearer and more detailed images of dislocation loops. The study concludes by discussing the potential applications of WBDF STEM techniques in defect analysis, emphasizing their adaptability across various material systems beyond nuclear materials.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Fusion Energy Sciences (FES)

Grant/Contract Number:: AC05-00OR22725; SC0023293

OSTI ID:: 2406779

Alternate ID(s):: OSTI ID: 2440195

Journal Information:: Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Vol. 10; ISSN 1431-9276

Publisher:: Microscopy Society of America (MSA)Copyright Statement

Country of Publication:: United States

Language:: English

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