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A transient site balance model for atomic layer etching

Journal Article · · Plasma Sources Science and Technology
 [1];  [2];  [3];  [2];  [4]
  1. Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
  2. Univ. of Houston, TX (United States)
  3. Univ. of Houston, TX (United States); Al-Azhar Univ., Cairo (Egypt)
  4. Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States); Princeton Univ., NJ (United States)
+ Show Author Affiliations
We present a transient site balance model of plasma-assisted atomic layer etching of silicon (Si) with alternating exposure to chlorine gas (Cl2) and argon ions (Ar+). Molecular dynamics (MD) simulation results are used to provide parameters for the model. The model couples the dynamics of a top monolayer surface region ('top layer') and a perfectly mixed subsurface region ('mixed layer'). The differential equations describing the rates of change of the Cl coverage in the two layers are transient mass balances. Model predictions include Cl coverages and rates of etching of various species from the surface as a function of Cl2 or Ar+ fluence. The simplified phenomenological model reproduces the MD simulation results well over a range of conditions. Comparing model predictions directly to experimental optical emission spectroscopy data, as reported in a previous paper, provides further evidence of the accuracy of the model.
Research Organization:
Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Fusion Energy Sciences (FES)
Grant/Contract Number:
AC02-09CH11466
OSTI ID:
2406001
Journal Information:
Plasma Sources Science and Technology, Journal Name: Plasma Sources Science and Technology Journal Issue: 7 Vol. 33; ISSN 0963-0252
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALE
molecular dynamics
site balance model
transient