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Band structure of Bi surfaces formed on Bi2 Se3 upon exposure to air

Journal Article · · Physical Review Materials
 [1];  [2];  [3];  [2];  [3];  [2]
  1. SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States); SLAC
  2. SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
  3. SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)

Bi2Se3 has been the focus of intense interest over the past decade due to its topological properties. Bi surfaces are known to form on Bi2Se3 upon exposure to atmosphere, but their electronic structure has not been investigated. Here, we report band structure measurements of such Bi surfaces using angle-resolved photoemission spectroscopy. Measured spectra can be well explained by the band structure of a single bilayer of Bi on Bi2Se3, and show that Bi surfaces consistently dominate the photoemission signal for air exposure times of at least 1 hour. These results demonstrate that atmospheric effects should be taken into consideration when identifying two-dimensional transport channels, and when designing surface-sensitive measurements of Bi2Se3, ideally limiting air exposure to no more than a few minutes.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
2404907
Alternate ID(s):
OSTI ID: 2356938
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 5 Vol. 8; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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  • Hewitt, Andrew S.; Wang, Jingying; Boltersdorf, Jon
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 4 https://doi.org/10.1116/1.4873689
journal July 2014
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