GHz repetition rate tabletop X-band photoinjector for free-electron laser applications

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:238749

Le Sage, G P; Fochs, S N; Feng, H X.C. ^[1]

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1. Univ. of California, Davis, CA (United States); and others

A 1-1/2 cell {pi}-mode X-bend (8.568 GHz) photoinjector system capable of producing trains of up to one hundred, 1 nC, 1ps, 5 MeV, {epsilon}{sub n} < 2.5 {pi} mm-mrad photoelectron bunches, at a micropulse repetition rate of 1-10 Hz, is currently under development at LLNL, in the UC Davis DAS coherent millimeter-wave group. The system is powered by a 20 MW, 8.568 GHz SLAC development klystron. The system also uses a Cs{sub 2}Te (Cesium Telluride) photocathode which has a quantum efficiency > 5% in the UV (210 nm). The compact UV laser system is composed of a synchronously modelocked AlGaAs semiconductor laser oscillator which produces pulses with a duration of 250 fs and 100 pJ energy at 830 nm, at a repetion rate of 2.142 GHz with less 400 is jitter, a 5 GHz bandwidth Lithium Niobate Mach-Zender fiber modulator, an 8-pass, 10{sup 6} gain, TiAl{sub 2}O{sub 3} (Titanium:Sapphire) chirped pulse amplifier, and 2 BBO frequency doublers in series to quadruple the laser frequency into the UV (207 nm).

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 238749
• Report Number(s): BNL--61982-Absts.; CONF-9508156--Absts.; ON: DE96002729; CNN: Grant DAAH04-93-0084; Grant F30602-94-2-0001
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
43 PARTICLE ACCELERATORS
BEAM BUNCHING
BEAM INJECTION
FREE ELECTRON LASERS
KLYSTRONS
PHOTOCATHODES
SEMICONDUCTOR LASERS