Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Bhattacharya, Shuvodip; Johnston, Steven W.; Bodnar, Robert J.; Hudait, Mantu K.

doi:10.1021/acsaelm.4c00347

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Journal Article · Thu Jun 06 00:00:00 EDT 2024 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.4c00347· OSTI ID:2376852

^[1]; Johnston, Steven W. ^[2]; Bodnar, Robert J. ^[1]; ^[1]

Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE: National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2376852

Report Number(s):: NREL/JA--5K00-90326; MainId:92104; UUID:a8a433e2-b0f8-4753-97b3-9f1734da00ca; MainAdminId:72912

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 6 Vol. 6; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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