Optical Properties of Tensilely Strained Ge Nanomembranes

Paiella, Roberto; Lagally, Max G.

doi:10.3390/nano8060407

Optical Properties of Tensilely Strained Ge Nanomembranes

Journal Article · Wed Jun 06 00:00:00 EDT 2018 · Nanomaterials

DOI:https://doi.org/10.3390/nano8060407· OSTI ID:2371764

; Lagally, Max G.

Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-03ER46028

OSTI ID:: 2371764

Alternate ID(s):: OSTI ID: 1511044

Journal Information:: Nanomaterials, Journal Name: Nanomaterials Journal Issue: 6 Vol. 8; ISSN 2079-4991; ISSN NANOKO

Publisher:: MDPI AGCopyright Statement

Country of Publication:: Switzerland

Language:: English

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