Temperature-induced degradation of GaN HEMT: An in situ heating study

Rasel, Md Abu Jafar; Zhang, Di; Chen, Aiping; Thomas, Melonie; House, Stephen D.; Kuo, Winson Chun Hsin; Watt, John Daniel; Islam, Ahmad Ehteshamul; Glavin, Nicholas; Smyth, Christopher M.; Haque, Aman; Wolfe, Douglas E.; Pearton, Stephen J.

doi:10.1116/6.0003490

Temperature-induced degradation of GaN HEMT: An in situ heating study

Journal Article · Fri Apr 26 00:00:00 EDT 2024 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/6.0003490· OSTI ID:2346098

^[1]; ^[2]; ^[2]; Thomas, Melonie ^[1]; ^[3]; ^[2]; ^[2]; ^[4]; ^[4]; ^[3]; ^[1]; ^[1]; ^[5]

Pennsylvania State Univ., University Park, PA (United States)
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Univ. of Florida, Gainesville, FL (United States)

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Defense Threat Reduction Agency (DTRA); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: 89233218CNA000001; NA0003525

OSTI ID:: 2346098

Alternate ID(s):: OSTI ID: 2570037

Report Number(s):: LA-UR--23-33128; LA-UR--24-25109

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 3 Vol. 42; ISSN 2166-2746

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Temperature-induced degradation of GaN HEMT: An in situ heating study

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