Observations of Guinier-Preston zones in an as-deposited Al-1wt.%Si-0.5wt.%Cu thin film

Journal Article · Wed May 01 04:00:00 EDT 1996 · Scripta Materialia

DOI:https://doi.org/10.1016/1359-6462(96)00004-8· OSTI ID:233904

Tung, C H ^[1]; Chiu, R L; Chang, P H ^[2]

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1. Vanguard International Semiconductor Corp., Hsinchu (Taiwan, Province of China)
2. National Chiao Tung Univ., Hsinchu (Taiwan, Province of China). Institutes of Materials Science and Engineering

Aluminum-copper (Al-Cu) and aluminum-silicon-copper (Al-Si-Cu) films are widely used as interconnects and contacts in contemporary very large scale integration (VLSI) technology. Cu alloying in Al results in the formation of intermetallic Al{sub 2}Cu precipitates, which increase corrosion susceptibility as well as process difficulty. Understanding the formation of Al2Cu theta-phase precipitates within Al alloy thin films is thus of great scientific and technical value. For the first time Guinier-Preston zones are observed by HRTEM to form on Al{l_brace}111{r_brace} planes in an as-deposited Al-1wt%Si-0.5wt%Cu thin films sputtered on oxidized Si substrate. At present time the chemical nature (Si or Cu) of the precipitation in the observed GP zones is still uncertain.

• OSTI ID: 233904
• Journal Information: Scripta Materialia, Journal Name: Scripta Materialia Journal Issue: 9 Vol. 34; ISSN 1359-6462; ISSN XZ503X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM BASE ALLOYS
COPPER ADDITIONS
ENERGY-LOSS SPECTROSCOPY
GRAIN BOUNDARIES
GRAIN SIZE
INTERMETALLIC COMPOUNDS
MICROSTRUCTURE
PRECIPITATION
SEGREGATION
SILICON
SILICON ALLOYS
SOLID SOLUTIONS
SPUTTERING
TETRAGONAL LATTICES
TRANSMISSION ELECTRON MICROSCOPY