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Quantum transport response of topological hinge modes

Journal Article · · Nature Physics
 [1];  [2];  [3];  [4];  [4];  [2];  [5];  [2];  [2];  [2];  [3];  [2];  [6];  [2];  [2];  [2];  [2];  [7];  [5];  [6] more »;  [4];  [8] « less
  1. Princeton University, NJ (United States); Florida State University
  2. Princeton University, NJ (United States)
  3. Beijing Institute of Technology (China); Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing (China)
  4. University of Texas at Dallas, Richardson, TX (United States)
  5. National High Magnetic Field Laboratory, Tallahassee, FL (United States)
  6. Beijing Institute of Technology (China)
  7. University of Zurich (Switzerland)
  8. Princeton University, NJ (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Electronic topological phases are typified by the conducting surface states that exist on the boundary of an insulating three-dimensional bulk. While the transport response of the two-dimensional surface states has been studied, the quantum response of the one-dimensional hinge modes has not been demonstrated. Here we provide evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps in the intrinsic topological insulator α-Bi4Br4. Our magnetoresistance measurements reveal pronounced Aharonov–Bohm oscillations that are periodic in h/e (where h denotes Planck’s constant and e is the electron charge). The observed periodicity evinces quantum interference of electrons circumnavigating around the hinges. We also demonstrate that the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry. Furthermore, our findings reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can eventually be applied to the development of efficient topological electronic devices.
Research Organization:
Florida State University, Tallahassee, FL (United States)
Sponsoring Organization:
Beijing Natural Science Foundation; National Key R&D Program of China; National Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
FG02-05ER46200; SC0002613
OSTI ID:
2337949
Journal Information:
Nature Physics, Journal Name: Nature Physics Vol. 20; ISSN 1745-2473
Publisher:
Nature Publishing Group (NPG)Copyright Statement
Country of Publication:
United States
Language:
English

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