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Direct Observation of Room–Temperature Magnetic Skyrmion Motion Driven by Ultra–Low Current Density in Van Der Waals Ferromagnets

Journal Article · · Advanced Materials
 [1];  [2];  [3];  [2];  [2];  [4];  [5];  [6];  [6];  [7];  [1];  [2]
  1. Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  2. Korea Research Institute of Standards and Science (KRISS), Daejeon (Korea, Republic of)
  3. Sungkyunkwan Univ., Suwon (Republic of Korea). SKKU Advanced Institute of Nanotechnology
  4. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Center for X-ray Optics
  5. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Center for X-ray Optics; Korea National University of Transportation, Chungju (Korea, Republic of)
  6. Korea Basic Science Institute, Daejeon (Republic of Korea). Center for Scientific Instrumentation
  7. Sungkyunkwan Univ., Suwon (Republic of Korea)
The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe3GaTe2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2335322
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 21 Vol. 36; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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