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Oxide dissolution and oxygen diffusion scenarios in niobium and implications on the Bean–Livingston barrier in superconducting cavities

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0191234· OSTI ID:2333619
 [1];  [2];  [1];  [3];  [4];  [1]
  1. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
  2. Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
  3. North Carolina State University, Raleigh, NC (United States)
  4. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
We generalize a native Nb2O5 dissolution model [G. Ciovati, Appl. Phys. Lett. 89, 022507 (2006)] to sequential overlayer dissolutions, multilayer dissolution, and realistic temperature profiles, which may be applicable to other materials. The model is applied to secondary ion mass spectrometry depth profile measurements for varying temperature profiles and two-step oxide dissolution in Nb and found to agree well. In the context of the Meissner screening response due to impurity profiles on the length scale of the London penetration depth, the shallow diffusion of O impurities results in a substantial decrease in the peak supercurrent density near the surface. In this framework, oxide dissolution and oxygen diffusion can account for a rise in peak supportable magnetic field in SRF cavities with baking time and a suppression after the optimal baking time is reached, in good agreement with peak-field baking temperatures and times as well as recent quench field measurements.
Research Organization:
Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP)
Grant/Contract Number:
AC05-06OR23177; SC0018918
OSTI ID:
2333619
Report Number(s):
DOE/OR/23177--7305; JLAB-ACC--24-3905
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 135; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (8)