During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.
Herath Mudiyanselage, Dinusha, et al. "β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances." Electronics, vol. 13, no. 7, Mar. 2024. https://doi.org/10.3390/electronics13071234
Herath Mudiyanselage, Dinusha, Da, Bingcheng, Adivarahan, Jayashree, Wang, Dawei, He, Ziyi, Fu, Kai, Zhao, Yuji, & Fu, Houqiang (2024). β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances. Electronics, 13(7). https://doi.org/10.3390/electronics13071234
Herath Mudiyanselage, Dinusha, Da, Bingcheng, Adivarahan, Jayashree, et al., "β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances," Electronics 13, no. 7 (2024), https://doi.org/10.3390/electronics13071234
@article{osti_2329356,
author = {Herath Mudiyanselage, Dinusha and Da, Bingcheng and Adivarahan, Jayashree and Wang, Dawei and He, Ziyi and Fu, Kai and Zhao, Yuji and Fu, Houqiang},
title = {β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances},
annote = {During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.},
doi = {10.3390/electronics13071234},
url = {https://www.osti.gov/biblio/2329356},
journal = {Electronics},
issn = {ISSN 2079-9292},
number = {7},
volume = {13},
place = {Switzerland},
publisher = {MDPI AG},
year = {2024},
month = {03}}