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Analysis and Characterization of Four-quadrant Switches based Commutation Cell

Conference · · 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.
Research Organization:
North Carolina State University
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
EE0008345
OSTI ID:
2324743
Conference Information:
Journal Name: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
Country of Publication:
United States
Language:
English

References (13)

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Matrix converters: a technology review journal April 2002
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies conference November 2021
Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications journal September 2022
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications conference October 2021
The auxiliary resonant commutated pole converter conference January 1990
Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs conference October 2022
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) journal October 2017
The generalised transformer: A new bidirectional, sinusoidal waveform frequency converter with continuously adjustable input power factor conference June 1980
Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes conference September 2020
Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems conference October 2022
Comparative evaluation of circuit topologies for 1-phase and 3-phase boost rectifiers operated with a low current distortion conference January 1994
Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs journal July 2019

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