Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Shani, Lior; Lueb, Pim; Menning, Gavin; Gupta, Mohit; Riggert, Colin; Littmann, Tyler; Hackbarth, Frey; Rossi, Marco; Jung, Jason; Badawy, Ghada; Verheijen, Marcel A.; Crowell, Paul A.; Bakkers, Erik P. A. M.; Pribiag, Vlad S.

doi:10.1088/2633-4356/ad2d6b

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO _x gate

Journal Article · Fri Mar 08 00:00:00 EST 2024 · Materials for Quantum Technology

DOI:https://doi.org/10.1088/2633-4356/ad2d6b· OSTI ID:2320319

; Lueb, Pim; Menning, Gavin; ; Riggert, Colin; Littmann, Tyler; Hackbarth, Frey; Rossi, Marco; Jung, Jason; Badawy, Ghada; ; Crowell, Paul A.; Bakkers, Erik P. A. M.;

Abstract

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

View Journal Article

Research Organization:: Univ. of Minnesota, Minneapolis, MN (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0019274

OSTI ID:: 2320319

Alternate ID(s):: OSTI ID: 2315064
OSTI ID: 2339875

Journal Information:: Materials for Quantum Technology, Journal Name: Materials for Quantum Technology Journal Issue: 1 Vol. 4; ISSN 2633-4356

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (28)

Atomic Layer Deposition for Graphene Device Integration Vervuurt, René H. J.; Kessels, Wilhelmus M. M. Erwin; Bol, Ageeth A. Advanced Materials Interfaces, Vol. 4, Issue 18 https://doi.org/10.1002/admi.201700232	journal	May 2017
Surface chemistry of graphene and graphene oxide: A versatile route for their dispersion and tribological applications Chouhan, Ajay; Mungse, Harshal P.; Khatri, Om P. Advances in Colloid and Interface Science, Vol. 283 https://doi.org/10.1016/j.cis.2020.102215	journal	September 2020
Graphene–dielectric integration for graphene transistors Liao, Lei; Duan, Xiangfeng Materials Science and Engineering: R: Reports, Vol. 70, Issue 3-6 https://doi.org/10.1016/j.mser.2010.07.003	journal	November 2010
Conductance Quantization at Zero Magnetic Field in InSb Nanowires Kammhuber, Jakob; Cassidy, Maja C.; Zhang, Hao Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b00051	journal	May 2016
High Mobility Stemless InSb Nanowires Badawy, Ghada; Gazibegovic, Sasa; Borsoi, Francesco Nano Letters, Vol. 19, Issue 6 https://doi.org/10.1021/acs.nanolett.9b00545	journal	April 2019
Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices Yang, Zedong; Heischmidt, Brett; Gazibegovic, Sasa Nano Letters, Vol. 20, Issue 5 https://doi.org/10.1021/acs.nanolett.9b05331	journal	April 2020
Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al ₂ O ₃ Films on Graphene Jeon, Jae Ho; Jerng, Sahng-Kyoon; Akbar, Kamran ACS Applied Materials & Interfaces, Vol. 8, Issue 43 https://doi.org/10.1021/acsami.6b09531	journal	October 2016
Multimode Fabry-Pérot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires Kretinin, Andrey V.; Popovitz-Biro, Ronit; Mahalu, Diana Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101522j	journal	September 2010
Quantized Conductance in an InSb Nanowire van Weperen, Ilse; Plissard, Sébastien R.; Bakkers, Erik P. A. M. Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl3035256	journal	December 2012
Two-dimensional gas of massless Dirac fermions in graphene Novoselov, K. S.; Geim, A. K.; Morozov, S. V. Nature, Vol. 438, Issue 7065, p. 197-200 https://doi.org/10.1038/nature04233	journal	November 2005
Spin–orbit qubit in a semiconductor nanowire Nadj-Perge, S.; Frolov, S. M.; Bakkers, E. P. A. M. Nature, Vol. 468, Issue 7327 https://doi.org/10.1038/nature09682	journal	December 2010
Exponential protection of zero modes in Majorana islands Albrecht, S. M.; Higginbotham, A. P.; Madsen, M. Nature, Vol. 531, Issue 7593 https://doi.org/10.1038/nature17162	journal	March 2016
Electrical control of single hole spins in nanowire quantum dots Pribiag, V. S.; Nadj-Perge, S.; Frolov, S. M. Nature Nanotechnology, Vol. 8, Issue 3 https://doi.org/10.1038/nnano.2013.5	journal	February 2013
Conductance through a helical state in an Indium antimonide nanowire Kammhuber, J.; Cassidy, M. C.; Pei, F. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00315-y	journal	September 2017
Vapor-liquid-solid mechanism of single crystal growth Wagner, R. S.; Ellis, W. C. Applied Physics Letters, Vol. 4, Issue 5, p. 89-90 https://doi.org/10.1063/1.1753975	journal	March 1964
Towards high mobility InSb nanowire devices Gül, Önder; Woerkom, David J. van; Weperen, Ilse van Nanotechnology, Vol. 26, Issue 21 https://doi.org/10.1088/0957-4484/26/21/215202	journal	May 2015
Kwant: a software package for quantum transport Groth, Christoph W.; Wimmer, Michael; Akhmerov, Anton R. New Journal of Physics, Vol. 16, Issue 6 https://doi.org/10.1088/1367-2630/16/6/063065	journal	June 2014
Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide Alexander-Webber, Jack A.; Sagade, Abhay A.; Aria, Adrianus I. 2D Materials, Vol. 4, Issue 1 https://doi.org/10.1088/2053-1583/4/1/011008	journal	November 2016
Charge-Impurity Effects in Hybrid Majorana Nanowires Woods, Benjamin D.; Das Sarma, Sankar; Stanescu, Tudor D. Physical Review Applied, Vol. 16, Issue 5 https://doi.org/10.1103/PhysRevApplied.16.054053	journal	November 2021
Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade Nadj-Perge, S.; Frolov, S. M.; van Tilburg, J. W. W. Physical Review B, Vol. 81, Issue 20 https://doi.org/10.1103/PhysRevB.81.201305	journal	May 2010
Conductance behavior in nanowires with spin-orbit interaction: A numerical study Rainis, Diego; Loss, Daniel Physical Review B, Vol. 90, Issue 23 https://doi.org/10.1103/PhysRevB.90.235415	journal	December 2014
Spin-orbit interaction in InSb nanowires van Weperen, I.; Tarasinski, B.; Eeltink, D. Physical Review B, Vol. 91, Issue 20 https://doi.org/10.1103/PhysRevB.91.201413	journal	May 2015
Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures Lutchyn, Roman M.; Sau, Jay D.; Das Sarma, S. Physical Review Letters, Vol. 105, Issue 7 https://doi.org/10.1103/PhysRevLett.105.077001	journal	August 2010
Helical Liquids and Majorana Bound States in Quantum Wires Oreg, Yuval; Refael, Gil; von Oppen, Felix Physical Review Letters, Vol. 105, Issue 17 https://doi.org/10.1103/PhysRevLett.105.177002	journal	October 2010
Fast Spin-Orbit Qubit in an Indium Antimonide Nanowire van den Berg, J. W. G.; Nadj-Perge, S.; Pribiag, V. S. Physical Review Letters, Vol. 110, Issue 6 https://doi.org/10.1103/PhysRevLett.110.066806	journal	February 2013
Interplay between Classical Magnetic Moments and Superconductivity in Quantum One-Dimensional Conductors: Toward a Self-Sustained Topological Majorana Phase Braunecker, Bernd; Simon, Pascal Physical Review Letters, Vol. 111, Issue 14 https://doi.org/10.1103/PhysRevLett.111.147202	journal	October 2013
Estimating disorder and its adverse effects in semiconductor Majorana nanowires Ahn, Seongjin; Pan, Haining; Woods, Benjamin Physical Review Materials, Vol. 5, Issue 12 https://doi.org/10.1103/PhysRevMaterials.5.124602	journal	December 2021
Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices Mourik, V.; Zuo, K.; Frolov, S. M. Science, Vol. 336, Issue 6084 https://doi.org/10.1126/science.1222360	journal	April 2012

Similar Records

Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices

Journal Article · Sun Apr 26 20:00:00 EDT 2020 · Nano Letters · OSTI ID:1618853

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
InSb
few-layers-graphene
nanowire
quantum transport

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Citation Formats

References (28)

Similar Records

Related Subjects

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO _x gate