Nanosecond semiconductor disk laser emitting at 496.5 nm

Journal Article · Thu Oct 01 00:00:00 EDT 2020 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QEL17387· OSTI ID:23141812

Butaev, M. R.; Kozlovsky, V. I.

An optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N{sub 2} laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7 %. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power. (lasers)

• OSTI ID: 23141812
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 50, Issue 10; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM SULFIDES
EFFICIENCY
GALLIUM ARSENIDES
LASERS
PULSES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
VAPOR PHASE EPITAXY
WAVELENGTHS
ZINC SELENIDES