Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Henshaw, Jacob Daniel; Kehayias, Pauli Mark; Basso, Luca; Jaris, Michael; Cong, Rong; Titze, Michael; Lu, Tzu-Ming; Lilly, Michael P.; Mounce, Andrew M.

doi:10.1088/2633-4356/ace095

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

Journal Article · Thu Jul 06 00:00:00 EDT 2023 · Materials for Quantum Technology

DOI:https://doi.org/10.1088/2633-4356/ace095· OSTI ID:2311514

^[1]; ^[1]; ^[1]; Jaris, Michael ^[2]; ^[3]; ^[1]; Lu, Tzu-Ming ^[1]; Lilly, Michael P. ^[1]; ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); General Atomics, San Diego, CA (United States)
Brown Univ., Providence, RI (United States)

The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV T₁ relaxometry measurements.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: NA0003525

OSTI ID:: 2311514

Report Number(s):: SAND--2023-06112J

Journal Information:: Materials for Quantum Technology, Journal Name: Materials for Quantum Technology Journal Issue: 3 Vol. 3; ISSN 2633-4356

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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