Split-well resonant-phonon terahertz quantum cascade laser

Levy, Shiran; Lander Gower, Nathalie; Piperno, Silvia; Addamane, Sadhvikas J.; Reno, John L.; Albo, Asaf

doi:10.1364/oe.486446

Split-well resonant-phonon terahertz quantum cascade laser

Journal Article · Tue Jun 20 00:00:00 EDT 2023 · Optics Express

DOI:https://doi.org/10.1364/oe.486446· OSTI ID:2311430

Levy, Shiran ^[1]; Lander Gower, Nathalie ^[1]; Piperno, Silvia ^[1]; Addamane, Sadhvikas J. ^[2]; Reno, John L. ^[2]; ^[1]

Bar-Ilan Univ., Ramat Gan (Israel)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al_0.3Ga_0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 2311430

Report Number(s):: SAND--2023-05626J

Journal Information:: Optics Express, Journal Name: Optics Express Journal Issue: 14 Vol. 31; ISSN 1094-4087

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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