Effect of thickness and surface composition on the stability of polarization in ferroelectric Hf x Zr 1 - x O 2 thin films
Journal Article
·
· Physical Review Materials
- Univ. of California, Los Angeles, CA (United States)
- Univ. of California, Los Angeles, CA (United States); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
- Univ. of California, Los Angeles, CA (United States); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States); Princeton Univ., NJ (United States)
Using density functional theory, we find that tailoring the surface composition provides a route to stabilize the polar phases of the promising ferroelectric material, HfxZr1-xO2. First, we show that for pure Hf O2, controlling the positively polarized surface to be relatively oxygen rich adequately screens the ferroelectric surface charges and stabilizes the polar orthorhombic phase. We then demonstrate that the ferroelectric polarization, as measured by the structural polar displacements, increases with decreasing thickness, leading to the emergence of a polar rhombohedral-like phase at the ultrathin limit (1.5 unit cells). Our findings extend to the cases of Hf0.5Zr0.5 O2 and Zr O2, both of which have surface energy landscapes similar to that of Hf O2. In conclusion, these findings are consistent with and offer insights into the observed absence of a ferroelectric thickness limit in HfxZr1-x O2-based thin films.
- Research Organization:
- Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-09CH11466
- OSTI ID:
- 2310910
- Journal Information:
- Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 12 Vol. 7; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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