Energetic states of isolated native defects in cubic boron pnictides
- Indiana Univ., PA (United States)
- Univ. of Houston, TX (United States); and others
The major chemical trends in the deep-energy levels of isolated sp{sup 3}-bonded substitutional native defects are reported for the first time in boron pnictides. Band structure calculations, based on a second-neighbor tight-binding theory, are presented for BN, BP, and BAs and the results are obtained for the electronic energy states of substitutional (isolated) defects in the Green`s-function framework. For sp{sup 3}-bonded impurities, a perturbation potential in the modified central-cell atomic like configuration is considered in which the off-diagonal elements in the perturbation matrix are systematically incorporated. Calculated results for the bound electronic states of isolated vacancies in BN are compared and discussed with the experimental data.
- OSTI ID:
- 230170
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electronic structure of defects and impurities in III-V nitrides. II. Be, Mg, and Si in cubic boron nitride
Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride