Preparation of highly oriented diamond thin film by microwave plasma-assisted chemical vapor deposition
- Kyushu Univ., Fukuoka (Japan); and others
A highly-oriented diamond thin film was synthesized on a Si (100) wafer by a multi-step microwave plasma chemical vapor deposition (multi-step MPCVD) process. The Si substrate was carburized in a mixture of CH{sub 4} and H{sub 2} without bias and then with a negative bias. The {open_quotes}mesh structure{close_quotes} oriented to the Si (100) was important as an indicator of oriented nucleation. Diamond nuclei were grown to [100] until most of randomly oriented nuclei were buried by [111] faces. The conditions were then switched to those preferred for the [111] growth. This procedure led to a highly [100]-oriented film, but steps between crystallites still remained. Finally CO{sub 2} was introduced and MPCVD was continued. A remarkably smooth diamond film was thus obtained.
- OSTI ID:
- 230059
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
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