Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

Journal Article · Sat Nov 30 23:00:00 EST 2019 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QEL17130· OSTI ID:23005043

Dudelev, V. V.; Kognovitskaya, E. A.; Lyutetskiy, A. V.; Slipchenko, S. O.; Pikhtin, N. A.; Novikov, I. I.; Karachinskii, L. Ya.; Kuchinskii, V. I.; Sokolovskii, G. S. ^[1]; Mikhailov, D. A.; Denisov, D. V. ^[2]; Andreev, A. D.; Babichev, A. V.; Egorov, A. Yu. ^[3]; Gladyshev, A. G. ^[4]; Voropaev, K. O.

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1. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskay ul. 26, 194021 St. Petersburg (Russian Federation)
2. St. Petersburg Electrotechnical University “LETI”, ul. Prof. Popova 5, 197376 St. Petersburg (Russian Federation)
3. ITMO University, Kronverkskii prosp. 49, 197101 St. Petersburg (Russian Federation)
4. Connector Optics LLC, ul. Domostroitel’naya 16, 194292 St. Petersburg (Russian Federation)

A technology of arrays of distributed-feedback semiconductor lasers for the spectral region of 1.55 μm and their characteristics are presented. Stable single-frequency lasing with a side mode suppression ratio higher than 25 dB is demonstrated. The possibility of continuous wavelength tuning in a range of up to 7 nm is shown. (lasers and active media)

• OSTI ID: 23005043
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 12 Vol. 49; ISSN 1063-7818; ISSN QUELEZ
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
LASERS
SEMICONDUCTOR MATERIALS
TUNING
WAVELENGTHS