Highly efficient red single transverse mode superluminescent diodes

Journal Article · Fri Dec 01 00:00:00 EST 2017 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QEL16533· OSTI ID:23000352

Andreeva, E. V.; Anikeev, A. S.; Il’chenko, S. N.; Chamorovskii, A. Yu.; Yakubovich, S. D.

Optimisation of the epitaxial growth of AlGaInP/GaInPAs nanoheterostructures and improvement of the technologies of active channel formation and p-contact deposition made it possible to considerably increase the external differential quantum efficiency (up to 0.5 mW mA{sup −1}), the catastrophic optical degradation threshold (up to 40 mW), and the spectral width (to FWHM exceeding 15 nm) of single transverse mode superluminescent diodes with the centre wavelength of about 675 nm. Lifetime tests demonstrated high reliability of these diodes at a cw output optical power up to 30 mW. (lasers)

• OSTI ID: 23000352
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 47, Issue 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPOSITION
EPITAXY
LASERS
OPTIMIZATION
QUANTUM EFFICIENCY
RELIABILITY
WAVELENGTHS