Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Journal of Materials Engineering and Performance

DOI:https://doi.org/10.1007/S11665-018-3715-X· OSTI ID:22971093

Rocci, Mirko; Demontis, Valeria; Prete, Domenic; Ercolani, Daniele; Sorba, Lucia; Beltram, Fabio ^[1]; Pennelli, Giovanni ^[2]; Roddaro, Stefano; Rossella, Francesco ^[1]

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1. NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR (Italy)
2. Università di Pisa, Dipartimento di Ingegneria dell’Informazione (Italy)

We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO{sub 2}/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.

• OSTI ID: 22971093
• Journal Information: Journal of Materials Engineering and Performance, Journal Name: Journal of Materials Engineering and Performance Journal Issue: 12 Vol. 27; ISSN 1059-9495; ISSN JMEPEG
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ASPECT RATIO
ELECTRIC CONDUCTIVITY
ELECTRIC HEATING
ELECTRIC POTENTIAL
EQUIPMENT
INDIUM ARSENIDES
NANOWIRES
SEMICONDUCTOR MATERIALS
SILICA
SILICON OXIDES
THERMAL CONDUCTIVITY