Optical characterization of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) films

Journal Article · Tue Jan 15 04:00:00 EST 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-018-1717-4· OSTI ID:22950455

Deepika,; Singh, H. ^[1]; Saxena, N. S. ^[2]

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1. The NorthCap University, Department of Applied Sciences (India)
2. University of Rajasthan, Semiconductor and Polymer Science Laboratory, Department of Physics (India)

The paper reports the optical properties of thin films of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) glassy alloys. The glassy alloys of Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) were prepared using melt quenching method. Thin films of nanostructured Ge{sub 1 − x}Sn{sub x}Se{sub 2.5} (x = 0, 0.3, 0.5) glassy alloys were prepared using physical vapor deposition method. The films were characterized using XRD, EDX and TEM, which confirmed the amorphous nature, composition and formation of nanorods in the samples. Absorption and transmission spectra of thin films were recorded in the spectral range 400–2500 nm to obtain energy band gap, refractive index, extinction coefficient, dielectric constant etc. Results show that refractive index increases while band gap decreases on increase of Sn content in the Ge–Se system. This is due to the increase in density of defect states within band gap. The values of Urbach energy support the obtained results.

• OSTI ID: 22950455
• Journal Information: Optical and Quantum Electronics, Journal Name: Optical and Quantum Electronics Journal Issue: 1 Vol. 51; ISSN OQELDI; ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DEFECTS
DIELECTRIC MATERIALS
METALLIC GLASSES
NANOSTRUCTURES
PHYSICAL VAPOR DEPOSITION
QUENCHING
REFRACTIVE INDEX
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION