Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap
- Warsaw University of Life Science SGGW, Faculty of Applied Informatics and Mathematics (Poland)
The goal of this work is the design of efficient infrared radiation detectors based on InAsSb compounds with two energy barriers around the absorber region. Two types of two-barrier detectors that work in the 3–5.5 μm wavelength range at 230 K is designed. Using our computer program to iteratively solve the Poisson equation, the spatial distribution of energy band edges in III–V heterostructures was calculated The influence of lattice stress, bending of the structure and doping on the energy shift of the edge of the bands is considered. Lattice strain is the cause of the formation of the misfit dislocations at the boundaries of the individual layers of the heterostructure. These dislocations partially relax the resulting stress and affect the lattice deformation in individual layers. From the minimum elastic energy condition, the density of these dislocations is determined. It has been shown that the band offset can be eliminated in the areas of both barriers in the designed two-barrier detectors.
- OSTI ID:
- 22950188
- Journal Information:
- Optical and Quantum Electronics, Vol. 51, Issue 7; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; Article Copyright (c) 2019 The Author(s); http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
- Country of Publication:
- United States
- Language:
- English
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